2SC1895 Просмотр технического описания (PDF) - SavantIC Semiconductor
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2SC1895 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1895
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=1A
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
VCB=750V; IE=0
VEB=5V; IC=0
IC=2A ; VCE=10V
IC=0.1A ; VCE=10V
MIN TYP. MAX UNIT
600
V
5
V
5.0
V
1.5
V
10
µA
10
µA
8
30
2
MHz
2
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