SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1905
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=100µA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=100µA ; IC=0
VCEsat Collector-emitter saturation voltage IC=50mA; IB=5mA
ICBO
Collector cut-off current
VCB=200V ;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=10m A ; VCE=10V
fT
Transition frequency
IC=10m A ; VCE=30V
COB
Output capacitance
IE=0 ; VCB=50V; f=1MHz
tstg
Storage time
IC=100mA; IB1=10mA; IB2=0
MIN TYP. MAX UNIT
300
V
350
V
7.5
V
1.0
V
2
µA
2
µA
40
250
50
MHz
4.5
pF
5
7.5
µs
2