2SC2261 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SC2261

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC2261

DESCRIPTION

·High Power Dissipation-

: PC= 80W(Max.)@TC=25℃

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 120V(Min.)

·Complement to Type 2SA981

APPLICATIONS

·Designed for general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

180

V

VCEO Collector-Emitter Voltage

120

V

VEBO Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

8

A

IBB

Base Current-Continuous

Collector Power Dissipation

PC

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature

3

A

80

W

150

℃

-65~150 ℃

isc Website：www.iscsemi.cn

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