2SC2245 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC2245 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2245
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min)
·High Switching Speed
APPLICATIONS
·Power switching
·Power amplification
·Power driver
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base Voltage
450
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IBB
Base Current-Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
4
A
100
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 ℃/W
isc Website：www.iscsemi.cn
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