2SC1893 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2SC1893

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC1893

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0

500

V

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

5

V

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A

5.0

V

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=3A; IB=0.6A

VCB=750V; IE=0

VEB=5V; IC=0

1.5

V

50 μA

50 μA

hFE

DC current gain

IC=1A ; VCE=5V

10

40

体 fT

Transition frequency

固I电NC半H导ANGE SEMICONDUCTOR COB

Collector output capacitance

IC=0.1A ; VCE=10V

IE=0; VCB=10V;f=1MHz

3

MHz

95

pF

2

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