2SC1881 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC1881 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=50mA,RBE=∞
V(BR)EBO Emitter-base breakdown voltage
IE=50mA, IC=0
VCEsat Collector-emitter saturation voltage IC=2.5A ,IB=20mA
ICBO
Collector cut-off current
VCB=60V, IE=0
ICEO
Collector cut-off current
VCE=30V, ,RBE=∞
hFE-1
DC current gain
IC=1.5A ; VCE=1.5V
hFE-2
DC current gain
IC=2.5A ; VCE=1.5V
ton
Turn-on time
toff
Turn-off time
VCC=11V, IC=2A
IB1=-IB2=8mA
Product Specification
2SC1881
MIN TYP. MAX UNIT
60
V
7
V
1.2
V
0.2 mA
0.4 mA
1000
500
1
μs
5
μs
2
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