C1953 Просмотр технического описания (PDF) - Inchange Semiconductor
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C1953 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10μA ;IC=0
VCEsat Collector-emitter saturation voltage IC=30mA ;IB=3mA
ICBO
Collector cut-off current
VCB=100V; IE=0
hFE
DC current gain
IC=10mA ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IE=-10mA ; VCB=10V
hFE Classifications
R
S
130-220 185-330
Product Specification
2SC1953
MIN TYP. MAX UNIT
150
V
5
V
1
V
1
μA
130
330
3
pF
70
MHz
2
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