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C1953 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге
Компоненты Описание
производитель
C1953
Iscsemi
Inchange Semiconductor Iscsemi
C1953 Datasheet PDF : 4 Pages
1 2 3 4
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1953
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SA914
·High VCEO
APPLICATIONS
·For low-frequency power pre-amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute Maximun Ratings (Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
VALUE
150
150
5
50
100
1.2
150
-55~150
UNIT
V
V
V
mA
mA
W

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