2SC1904 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2SC1904

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=1mA; RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=10μA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=10μA ;IC=0

VCEsat Collector-emitter saturation voltage IC=10mA ;IB=1mA

VBEsat Base-emitter saturation voltage

IC=10mA ;IB=1mA

ICBO

Collector cut-off current

VCB=140V; IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE

DC current gain

IC=10mA ; VCE=5V

COB

Output capacitance

IE=0 ; VCB=10V;f=1MHz

fT

Transition frequency

IC=10mA ; VCE=5V

Product Specification

2SC1904

MIN TYP. MAX UNIT

150

V

150

V

5

V

0.5

V

1.0

V

1

μA

1

μA

35

500

3

pF

70

MHz

2

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