2SC2235G(2009) Просмотр технического описания (PDF) - Unisonic Technologies

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2SC2235G
(Rev.:2009)

NPN SILICON TRANSISTOR

Unisonic Technologies 

2SC2235

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING ( Ta=25°C ,unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

120

V

Collector-Emitter Voltage

VCEO

120

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

800

mA

Emitter Current

IE

-800

mA

Collector Power Dissipation

PC

900

mW

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)

PARAMETER

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

Collector Output Capacitance

SYMBOL

TEST CONDITIONS

VBCEO IC =10mA, IB=0

VBEBO IE=1mA, IC =0

ICBO VCB=120V, IE=0

IEBO VEB=5V, IC=0

hFE VCE=5V, IC =100mA

VCE(SAT) IC =500mA, IB=50mA

VBE VCE=5V, IC =500mA

fT

VCE=5V, IC =100mA

Cob VCB=10V, IE=0,f=1MHz

„ CLASSIFICATION OF hFE

MIN TYP MAX UNIT

120

V

5

V

100 nA

100 nA

80

240

1.0 V

1.0 V

120

MHz

30 pF

RANK

RANGE

Y

120-240

O

80-160

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R211-012.B

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