2SC1881 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SC1881

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SC1881(K)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO 60

—

voltage

Emitter to base breakdown

V(BR)EBO

7

—

voltage

Collector cutoff current

DC current transfer ratio

I CBO

—

—

I CEO

—

—

hFE

1000 —

500 —

Collector to emitter saturation VCE(sat)

—

—

voltage

Turn on time

Turn off time

Note: 1. Pulse test.

t on

—

1

t off

—

5

Max Unit

—

V

—

V

0.2 mA

0.4 mA

—

—

1.2 V

—

µs

—

µs

Test conditions

IC = 50 mA, RBE = ∞

IE = 50 mA, IC = 0

VCB = 60 V, IE = 0

VCE = 30 V, RBE = ∞

VCE = 1.5 V

IC = 1.5 A*1

IC = 2.5 A*1

IC = 2.5 A, IB = 20 mA*1

VCC = 11 V, IC = 2 A,

IB1 = –IB2 = 8 mA

Maximum Collector Dissipation Curve

30

20

10

0

50

100

150

Case temperature TC (°C)

Area of Safe Operation

10

iC (peak)

5

IC max

2

1.0

0.5

0.2 Ta = 25°C

0.1 1 shot pulse

0.05

12

5 10 20 50 100

Collector to emitter voltage VCE (V)

2

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