C1516 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

C1516

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ,IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ,IC=0

VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A

VBEsat

Base-emitter saturation voltage

IC=1A; IB=0.1A

ICBO

Collector cut-off current

VCB=35V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=0.5A ; VCE=2V

fT

Transition frequency

IC=0.2A ; VCE=10V

hFE Classifications

B

C

60-120

100-200

Product Specification

2SC1516

MIN TYP. MAX UNIT

35

V

5

V

2.0

V

1.5

V

20

µA

20

µA

60

200

110

MHz

2

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