2SC1391 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC1391 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=50μA ;IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=50μA ;IC=0
VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA
ICBO
Collector cut-off current
VCB=300V;IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=50mA ; VCE=10V
fT
Transition frequency
IC=10mA ; VCE=20V
Product Specification
2SC1391
MIN TYP. MAX UNIT
300
V
300
V
5
V
2.0
V
5
μA
5
μA
30
160
25
MHz
2
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