2SC1586 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
2SC1586 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCB=250V; IE=0
VEB=6V; IC=0
IC=5A ; VCE=4V
fT
Transition frequency
IC=1A ; VCE=12V
COB
Collector output capacitance
IE=0 ; VCB= 10V; f=1MHz
Product Specification
2SC1586
MIN TYP. MAX UNIT
200
V
6
V
2.0
V
0.1 mA
0.1 mA
60
10
MHz
110
pF
2
Share Link: 