C1569 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге

Компоненты Описание

производитель

C1569

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC1569

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

:V(BR)CEO= 300V(Min)

·DC Current Gain-

: hFE= 40-170 @IC= 50mA, VCE= 10V

·High Current-Gain Bandwidth Product

APPLICATIONS

·Designed for color TV chroma output applications.

www.iscsemi.cn ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

300

V

VCEO Collector-Emitter Voltage

300

V

VEBO Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

150

mA

IE

Emitter Current-Continuous

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-150

mA

1.5

W

12.5

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

isc Website：www.iscsemi.cn

Share Link: