C1568 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

C1568

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC1568

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEsat Collector-emitter saturation voltage IC=1A ;IB=B 50m A

0.5

V

VBEsat Base-emitter saturation voltage

IC=0.5A ;IB=50m A

V(BR)CBO Collector-base breakdown voltage

IC=10μA;IE=0

1.2

V

18

V

V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0

18

V

V(BR)EBO Emitter-base breakdown voltage

IE=10μA; IC=0

5

V

hFE-1

DC current gain

IC=500mA ; VCE=2V

90

280

hFE-2

DC current gain

ICBO

Collector cut-off current

ICEO

Collector cut-off current

IC=1.5A ; VCE=2V

VCB=10V ; IE=0

VCE=18V ; IB=0

50

1

μA

10

μA

COB

Output capacitance

IE=0; VCB=6V; f=1MHz

12

pF

fT

Transition frequency

IE=-50mA ;VCB=6V;f=200MHz

150

MHz

‹ hFE-1 classifications

Q

R

S

90-155 130-210 180-280

2

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