2SC1507 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SC1507

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC1507

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CBO Collector-base breakdown voltage

IC=10μA ;IE=0

300

V

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

300

V

V(BR)EBO Emitter-base breakdown voltage

IE=10μA ;IC=0

7

V

VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA

2.0

V

ICBO

Collector cut-off current

VCB=200V;IE=0

100 μA

IEBO

Emitter cut-off current

VEB=7V; IC=0

100 μA

hFE

DC current gain

IC=10mA ; VCE=10V

40

240

COB

Output capacitance

导体 fT

Transition frequency

固I电NC半HANGE SEMICONDUCTOR ‹ hFE classifications

R

O

Y

40-80 70-140 120-240

IE=0; VCB=50V;f=1MHz

IC=10mA ; VCE=30V

4

40

80

pF

MHz

2

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