2SB988 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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Компоненты Описание

производитель

2SB988

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-30mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A

VBE

Base-emitter on voltage

IC=-0.5A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-60V; IE=0

IEBO

Emitter cut-off current

VEB=-7V; IC=0

hFE-1

DC current gain

IC=-0.5A ; VCE=-5V

hFE-2

DC current gain

IC=-3A ; VCE=-5V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-0.5A ; VCE=-5V

‹ hFE-1 Classifications

O

Y

60-120

100-200

Product Specification

2SB988

MIN TYP. MAX UNIT

-60

V

-1.0

V

-1.0

V

-0.1 mA

-0.1 mA

60

200

20

150

pF

9

MHz

2

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