C1002 Просмотр технического описания (PDF) - SavantIC Semiconductor

Номер в каталоге

Компоненты Описание

производитель

C1002

Silicon NPN Power T ransistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC1002

CHARACTERISTICS

Tj=25? unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1mA ; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1µA; IC=0

VCEsat Collector-emitter saturation voltage IC=20mA; IB=2mA

VBEsat Base-emitter saturation voltage

IC=20mA; IB=2mA

ICEO

Collector cut-off current

IEBO

Emitter cut-off current

hFE

DC current gain

fT

Transition frequency

VCE=200V; IB=0

VEB=5V; IC=0

IC=10mA ; VCE=10V

IC=10mA ; VCE=20V

MIN TYP. MAX UNIT

300

V

5

V

1.0

V

1.5

V

1

µA

1

µA

40

200

60

MHz

2

Share Link: