2SC1141 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC1141 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=8A; IB=1.6A
VCB=600V; IE=0
VEB=7V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7.5A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
Product Specification
2SC1141
MIN TYP. MAX UNIT
300
V
7
V
1.5
V
1.6
V
0.1 mA
0.1 mA
15
50
10
25
10
MHz
2
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