2SC1108 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC1108 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0
V(BR)EBO Emitter-base breakdown votage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=3A;IB=0.3 A
VBEsat Base-emitter saturation voltage
IC=3A;IB=0.3 A
ICBO
Collector cut-off current
VCB=100V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=12V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
Product Specification
2SC1108
MIN TYP. MAX UNIT
100
V
5
V
1.5
V
2.0
V
0.1
mA
0.1
mA
100
320
10
MHz
25
pF
2
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