B943 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

B943

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB943

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0

-80

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB=B -0.1A

-0.5 V

VBE(sat) Base-Emitter Saturation Voltage

ICBO

Collector Cutoff Current

IC= -2A; IB=B -0.1A

VCB= -100V; IE= 0

-1.5 V

-10 μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-50 μA

hFE-1

DC Current Gain

IC= -0.1A; VCE= -2V

45

hFE-2

DC Current Gain

IC= -0.5A; VCE= -2V

90

260

fT

Current-Gain—Bandwidth Product

IC=-0.5A; VCE= -10V; ftest=10MHz

30

MHz

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= -0.5A, IB1= -IB2= -50mA

0.3

μs

1.1

μs

0.3

μs

‹ hFE-1 Classifications

Q

P

90-180 130-260

isc Website：www.iscsemi.cn

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