2SB0954 Просмотр технического описания (PDF) - Panasonic Corporation

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производитель

2SB0954

Silicon PNP epitaxial planar type(For power switching)

Panasonic Corporation 

Power Transistors

PC — Ta

50

(1) TC=Ta

(2) With a 100 × 100 × 2mm

Al heat sink

40

(3) With a 50 × 50 × 2mm

Al heat sink

(4) Without heat sink

(PC=2W)

30

(1)

20

10

(2)

(3)

(4)

0

0 20 40 60 80 100 120 140 160

Ambient temperature Ta (˚C)

–2.5

–2.0

–1.5

–1.0

– 0.5

IC — VCE

IB=–40mA

–30mA

TC=25˚C

–25mA

–20mA

–10mA

–8mA

–6mA

–4mA

–2mA

0

0 –1 –2 –3 –4 –5 –6

Collector to emitter voltage VCE (V)

2SB0954, 2SB0954A

IC — VBE

–10

VCE=–4V

–8

–6

25˚C

TC=100˚C –25˚C

–4

–2

0

0 – 0.4 – 0.8 –1.2 –1.6 –2.0

Base to emitter voltage VBE (V)

–100

–30

–10

VCE(sat) — IC

IC/IB=10

–3

–1

– 0.3

– 0.1

– 0.03

25˚C

TC=100˚C

–25˚C

– 0.01

– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10

Collector current IC (A)

10000

3000

hFE — IC

VCE=–4V

1000

300 TC=100˚C

25˚C

100

–25˚C

30

10

3

1

– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10

Collector current IC (A)

10000

3000

1000

fT — IC

VCE=–5V

f=10MHz

TC=25˚C

300

100

30

10

3

1

– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10

Collector current IC (A)

Area of safe operation (ASO)

–100

–30

Non repetitive pulse

TC=25˚C

–10

–3 ICP

–1

IC

– 0.3

– 0.1

t=10ms

DC

– 0.03

– 0.01

–1 –3 –10 –30 –100 –300 –1000

Collector to emitter voltage VCE (V)

Rth(t) — t

103

(1) Without heat sink

(2) With a 100 × 100 × 2mm Al heat sink

102

(1)

(2)

10

1

10–1

10–2

10–4

10–3

10–2

10–1

1

10

102

103

104

Time t (s)

2

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