2SB0954 Просмотр технического описания (PDF) - Panasonic Corporation
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2SB0954 Datasheet PDF : 3 Pages
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Power Transistors
2SB0954, 2SB0954A (2SB954, 2SB954A)
Silicon PNP epitaxial planar type
For power amplification
I Features
G High forward current transfer ratio hFE which has satisfactory linearity
G Low collector to emitter saturation voltage VCE(sat)
G Full-pack package which can be installed to the heat sink with
one screw
I Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB0954
–60
VCBO
V
base voltage 2SB0954A
–80
Collector to 2SB0954
–60
VCEO
V
emitter voltage 2SB0954A
–80
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–2
A
Collector current
IC
–1
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
30
W
2
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.5 +0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
I Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min
Collector cutoff
current
2SB0954
ICEO
2SB0954A
VCE = –30V, IB = 0
VCE = –60V, IB = 0
Collector cutoff
current
2SB0954
ICES
2SB0954A
VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
Emitter cutoff current
IEBO
VEB = –5V, IC = 0
Collector to emitter 2SB0954
–60
VCEO
IC = –30mA, IB = 0
voltage
2SB0954A
–80
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VCE(sat)
VBE
fT
ton
tstg
tf
VCE = –4V, IC = – 0.2A
70
VCE = –4V, IC = –1A
15
IC = –1A, IB = – 0.125A
VCE = –4V, IC = –1A
VCE = –5V, IC = – 0.2A, f = 10MHz
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A,
VCC = –50V
typ max Unit
–300
µA
–300
–200
µA
–200
–1
mA
V
250
–1
V
–1.3
V
30
MHz
0.5
µs
1.2
µs
0.3
µs
*hFE1 Rank classification
Rank
Q
P
hFE1
70 to 150 120 to 250
Note.) The Part numbers in the Parenthesis show conventional part number.
1
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