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2SB0953 Просмотр технического описания (PDF) - Panasonic Corporation

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Компоненты Описание
производитель
2SB0953
Panasonic
Panasonic Corporation Panasonic
2SB0953 Datasheet PDF : 4 Pages
1 2 3 4
Power Transistors
2SB0953 (2SB953), 2SB0953A (2SB953A)
Silicon PNP epitaxial planar type
For low-voltage switching
Features
Low collector-emitter saturation voltage VCE(sat)
High-speed switching
Full-pack package which can be installed to the heat sink with one screw
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage 2SB0953 VCBO
40
V
(Emitter open)
2SB0953A
50
Collector-emitter voltage 2SB0953 VCEO
20
V
(Base open)
2SB0953A
40
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
7
A
Peak collector current
ICP
12
A
Collector power
PC
30
W
dissipation
Ta = 25°C
2
Junction temperature
Tj
150
°C
Storage temperature
Tstg 55 to +150 °C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage 2SB0953 VCEO IC = −10 mA, IB = 0
20
V
(Base open)
2SB0953A
40
Collector-base cutoff
2SB0953 ICBO VCB = −40 V, IE = 0
current (Emitter open)
2SB0953A
VCB = −50 V, IE = 0
Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0
Forward current transfer ratio
hFE1 VCE = −2 V, IC = − 0.1 A
45
hFE2 * VCE = −2 V, IC = −2 A
60
Collector-emitter saturation voltage
VCE(sat) IC = −5 A, IB = −0.16 A
Base-emitter saturation voltage
VBE(sat) IC = −5 A, IB = − 0.16 A
Transition frequency
fT
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
50 µA
50
50 µA
260
0.6 V
1.5
V
150
MHz
140
pF
Turn-on time
Storage time
Fall time
ton
IC = −2 A, IB1 = −66 mA, IB2 = 66 mA
0.1
µs
tstg
VCC = −20 V
0.5
µs
tf
0.1
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
60 to 120
90 to 180 130 to 260
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
SJD00032BED
1

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