2SB806 Просмотр технического описания (PDF) - TY Semiconductor

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производитель

2SB806

PNP Silicon Epitaxial Transistor

TY Semiconductor 

■ Features

● High collector to emitter voltage: VCEO＞-120V.

Product specification

2SB806

ＳＯＴ－８９

４．５０±０．１

１．８０±０．１

Ｕｎｉｔ：ｍｍ

１．５０　±０．１

１２３

０．４８±０．１ ０．５３±０．１

０．４４±０．１

３．００±０．１

１．Ｂａｓｅ

２．Ｃｏｌｌｅｃｔｏｒ

３．Ｅｍｉｔｔｅｒ

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current (pulse) *1

Collector power dissipation

Junction temperature

Storage temperature

*1. PW≤10ms,duty cycle≤50%

Symbol

Rating

Unit

VCBO

-120

V

VCEO

-120

V

VEBO

-5

V

IC

-0.7

A

IC(pu)

-1.2

A

Pc

2

W

Tj

150

℃

Tstg

-55 to +150

℃

■ Electrical Characteristics Ta = 25℃

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain *

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-emitter voltage *

Output capacitance

Transition frequency

* PW≤350µs,duty cycle≤2%

Symbol

Testconditons

ICBO VCB = -120V, IE=0

IEBO VEB = -5V, IC=0

VCE =-1V , IC = -100mA

hFE

VCE =-1V , IC = -5.0mA

VCE(sat) IC = -500mA , IB = -50mA

VBE(sat) IC = -500mA , IB = -50mA

VBE VCE =-10V , IC = -10mA

Cob VCB = -10V , IE = 0 , f = 1.0MHz

fT VCE = -10V , IE = 10mA

Min

90

45

-550

Typ

200

200

-0.4

-0.9

-620

14

75

Max

-100

-100

400

-0.6

-1.5

-650

Unit

nA

nA

V

V

mV

pF

MHz

■ hFE Classification

Marking

hFE

KR

90～180

KQ

135～270

KP

200～400

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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