2SB766 Просмотр технического описания (PDF) - TY Semiconductor

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Компоненты Описание

производитель

2SB766

Silicon PNP Epitaxial Planar Type

TY Semiconductor 

SMD Type

Product specification

2SB766,2SB766A

Electrical Characteristics Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector-base cutoff current

2SB766

2SB766A

2SB766

2SB766A

Forward current transfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Testconditons

VCBO IC = -10 ìA, IE = 0

VCEO IC = -2 mA, IB = 0

VEBO IE = -10ìA, IC = 0

ICBO VCB = -20 V, IE = 0

VCE = -10 V, IC = -500 mA

hFE

VCE = -5 V, IC = -1 A

VCE(sat) IC = -500 mA, IB = -50 mA

VBE(sat) IC = -500 mA, IB = -50 mA

fT VCB = -10 V, IE = 50 mA, f = 200 MHz

Cob VCB = -10 V, IE = 0, f = 1 MHz

Min Typ Max Unit

-30

V

-60

-25

V

-50

-5

V

-0.1 nA

85

340

50

-0.2 -0.4 V

-0.85 -1.2 V

200

MHz

20 30 pF

hFE Classification

Marking

Rank

hFE

2SB766(A)/2SB766A(B)

Q

R

S

85 170

120 240

17 340

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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