2SB766Q Просмотр технического описания (PDF) - Secos Corporation.

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производитель

2SB766Q

PNP Silicon Medium Power Transistor

Secos Corporation. 

Elektronische Bauelemente

2SB766

PNP Silicon

Medium Power Transistor

PC ⎯ Ta

1.4

Copper plate at the collector

is more than 1 cm2 in area,

1.2

1.7 mm in thickness

1.0

0.8

0.6

0.4

0.2

0

0 20 40 60 80 100 120 140 160

Ambient temperature Ta (°C)

−1.50

−1.25

−1.00

− 0.75

− 0.50

− 0.25

IC ⎯ VCE

Ta = 25°C

IB = −10 mA

−9 mA

−8 mA

−7 mA

−6 mA

−5 mA

−4 mA

−3 mA

−2 mA

−1 mA

0

0

−2 −4 −6 −8 −10

Collector-emitter voltage VCE (V)

VCE(sat) ⎯ IC

−100

IC / IB = 10

−10

−1

− 0.1

Ta = 75°C

25°C

−25°C

− 0.01

− 0.01

− 0.1

−1

−10

Collector current IC (A)

VBE(sat) ⎯ IC

−100

IC / IB = 10

−10

25°C

−1

− 0.1

Ta = −25°C

75°C

− 0.01

− 0.01

− 0.1

−1

−10

Collector current IC (A)

hFE ⎯ IC

600

VCE = −10 V

500

400

Ta = 75°C

300

25°C

200

−25°C

100

0

− 0.01

− 0.1

−1

−10

Collector current IC (A)

fT ⎯ IE

200 VCB = −10 V

Ta = 25°C

160

120

80

40

0

1

10

100

Emitter current IE (mA)

Cob ⎯ VCB

50

IE = 0

f = 1 MHz

Ta = 25°C

40

30

20

10

Safe operation area

−10

Single pulse

Ta = 25°C

ICP

−1 IC

t = 10 ms

− 0.1

t=1s

− 0.01

0

−1

−10

−100

Collector-base voltage VCB (V)

− 0.001

− 0.01

− 0.1

−1

−10

Collector-emitter voltage VCE (V)

http://www.SeCoSGmbH.com

01-Jun-2002 Rev. A

Any changing of specification will not be informed individual

Page 2 of 2

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