2SB792A Просмотр технического описания (PDF) - Panasonic Corporation
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2SB792A Datasheet PDF : 3 Pages
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Transistor
2SB0792, 2SB0792A (2SB792, 2SB792A)
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD0814 (2SD814)
Unit: mm
I Features
G High collector to emitter voltage VCEO.
G Low noise voltage NV.
G Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings (Ta=25˚C)
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
Parameter
Symbol
Ratings
Unit
Collector to 2SB0792
–150
base voltage 2SB0792A
VCBO
–185
V
Collector to 2SB0792
–150
VCEO
V
emitter voltage 2SB0792A
–185
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–100
mA
Collector current
IC
–50
mA
Collector power dissipation PC
200
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : I(2SB0792)
2F(2SB0792A)
I Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to emitter 2SB0792
voltage
2SB0792A
ICBO
VCEO
VCB = –100V, IE = 0
IC = –100µA, IB = 0
–150
–185
–1
µA
V
Emitter to base voltage
Forward current
2SB0792
transfer ratio
2SB0792A
VEBO
hFE*
IE = –10µA, IC = 0
VCE = –5V, IC = –10mA
–5
V
130
450
130
330
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
Noise voltage
NV
IC = –30µA, IB = –3mA
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
VCE = –10V, IC = –1mA, GV = 80dB,
Rg = 100kΩ, Function = FLAT
–1
V
200
MHz
4
pF
150
mV
*hFE Rank classification
Rank
R
S
T
hFE
Marking 2SB0792
Symbol
2SB0792A
130 ~ 220
IR
2FR
185 ~ 330
IS
2FS
260 ~ 450
IT
—
Note.) The Part numbers in the Parenthesis show
conventional part number.
1
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