B1642 Просмотр технического описания (PDF) - New Jersey Semiconductor
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B1642 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc=-10mA;lB=0
VcE(sat) Collector-Emitter Saturation Voltage lc= -2.5A; IB= -0.25A
VBE(OH) Base-Emitter On Voltage
lc= -0.5A ; VCE= -5V
ICBO
Collector Cutoff Current
Vcs= -60V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -7V; lc= 0
hpE-1 DC Current Gain
lc= -0.5A ; VCE= -5V
hFE-2
DC Current Gain
lc=-3A;VCE=-5V
COB
Output Capacitance
lE=0;VcB=-10V;ftest=1MHz
fr
Current-Gain—Bandwidth Product
lc= -0.5A ; VCE= -5V
2SB1642
MIN TYP. MAX UNIT
-60
V
-1.5 V
-1.0 V
-10 nA
-10 viA
100
320
20
50
PF
9
MHz
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