2SB407 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SB407

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A

VBEsat

Base-emitter saturation voltage

IC=-6A; IB=-0.6A

ICBO

Collector cut-off current

VCB=-30V; IE=0

IEBO

Emitter cut-off current

VEB=-10V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-1.5V

Product Specification

2SB407

MIN TYP. MAX UNIT

-30

V

-30

V

-10

V

-1.0

V

-1.5

V

-10

µA

-10

µA

80

2

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