2SB1624 Просмотр технического описания (PDF) - SavantIC Semiconductor
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2SB1624 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Darlington Power Transistors
Product Specification
2SB1624
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-5mA
VBEsat
Base-emitter saturation voltage
IC=-5A ;IB=-5mA
ICBO
Collector cut-off current
VCB=-110V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-5A ; VCE=-4V
Cob
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-0.5A ; VCE=-12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A;RL=6A
IB1=- IB2=-5mA
VCC=-30V
MIN TYP. MAX UNIT
-110
V
-2.5
V
-3.0
V
-100
µA
-100
µA
5000
110
pF
100
MHz
1.1
µs
3.2
µs
1.1
µs
hFE Classifications
O
P
Y
5000-12000 6500-20000 15000-30000
2
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