2SB563 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SB563

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB563

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= -1mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB=B -0.3A

VBE(sat) Base-Emitter Saturation Voltage

IC= -3A; IB=B -0.3A

ICBO

Collector Cutoff Current

VCB= -80V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE

DC Current Gain

IC= -1A; VCE= -2V

MIN TYP. MAX UNIT

-80

V

-80

V

-5

V

-1.0 V

-1.5 V

-0.1 mA

-0.1 mA

30

200

isc Website：www.iscsemi.cn

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