2SB563 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2SB563

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB563

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -80V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= -1.0V(Max) @IC= -3A

·Complement to Type 2SD297

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-80

V

-5

V

-3.0

A

25

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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