2SB509 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2SB509

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB509

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

-60

V

VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A

-1.0

V

VBE

Base-emitter on voltage

IC=-1A ; VCE=-2V

-1.5

V

ICBO

Collector cut-off current

VCB=-20V; IE=0

-0.1 mA

IEBO

Emitter cut-off current

VEB=-4V; IC=0

-1.0 mA

hFE-1

DC current gain

IC=-1A ; VCE=-2V

40

320

hFE-2

DC current gain

导体 fT

Transition frequency

IC=-0.1A ; VCE=-2V

IC=-0.5A ; VCE=-5V

固I电NC半HANGE SEMICONDUCTOR ‹ hFE-1 Classifications

C

D

E

F

40-80 60-120 100-200 160-320

40

8

MHz

2

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