2SB1694 Просмотр технического описания (PDF) - ROHM Semiconductor
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2SB1694 Datasheet PDF : 9 Pages
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2SB1694
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol
Values
Unit
VCBO
-30
V
VCEO
-30
V
VEBO
-6
V
IC
-1
A
ICP*1
-2
A
PD*2
200
mW
Tj
150
℃
Tstg
-55 to +150
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BVCBO IC = -10μA
-30 -
-
V
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
-30 -
-
V
Emitter-base breakdown voltage BVEBO IE = -10μA
-6
-
-
V
Collector cut-off current
ICBO VCB = -30V
-
- -100 nA
Emitter cut-off current
IEBO VEB = -6V
-
- -100 nA
Collector-emitter saturation voltage VCE(sat) IC = -500mA, IB = -25mA - -180 -380 mV
DC current gain
hFE VCE = -2V, IC = -100mA 270 - 680 -
Transition frequency
fT
VCE = -2V, IE = 100mA,
f = 100MHz
-
320
-
MHz
Output capacitance
Cob
VCB = -10V, IE = 0A,
f = 1MHz
*1 Pw=1ms, Single Pulse.
*2 Each terminal mounted on a reference land.
-
7
- pF
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20190621 - Rev.003
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