2SB1690KT146 Просмотр технического описания (PDF) - ROHM Semiconductor
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2SB1690KT146 Datasheet PDF : 3 Pages
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Transistors
2SB1690K
General purpose amplification(−12V, −2A)
2SB1690K
zApplications
Low frequency amplifier
Deiver
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ≤ −180mV
at IC= −1A / IB= −50mA
zExternal dimensions (Units : mm)
1.6
2.8
0.3Min.
Each lead has same dimensions
ROHM : SMT3
(1) Emitter
EIAJ : SC-59
(2) Base
JEDEC : SOT-346
(3) Collector
abbreviated symbol : FV
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
−15
V
Collector-emitter voltage
VCEO
−12
V
Emitter-base voltage
VEBO
−6
V
Collector current
−2
A
IC
−4
A∗
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
∗ Single pulse Pw=1ms
Tstg
−55 to +150
°C
zPackaging specifications
Package
Type Code
Basic ordering
unit (pieces)
Taping
T146
3000
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −15
Collector-emitter breakdown viltage BVCEO −12
Emitter-base breakdown voltage
BVEBO −6
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collerctor-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE
270
Transition frequency
fT
−
Output capacitance
Cob
−
∗ Pulsed
Typ.
−
−
−
−
−
−120
−
360
15
Max.
−
−
−
−100
−100
−180
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC= −10µA
IC= −1mA
IE= −10µA
VCB= −15V
VEB= −6V
IC= −1A, IB= −50mA
VCE= −2V, IC= −200mA∗
VCE= −2V, IE= −200mA , f=100MHz∗
VCB= −10V, IE=0mA, f=1MHz
Rev.A
1/2
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