B1641 Просмотр технического описания (PDF) - Toshiba
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B1641 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1641
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
2SB1641
Unit: mm
• High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −2.5 A)
• Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2.5 A)
• Complementary to 2SD2526
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
Unit
−100
V
−100
V
−7
V
−5
A
−8
−0.5
A
1.8
W
150
°C
−55 to 150
°C
Equivalent Circuit
COLLECTOR
BASE
≈ 5 kΩ
≈ 150 Ω
EMITTER
JEDEC
―
JEITA
―
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
1
2004-07-26
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