2SB1254 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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производитель

2SB1254

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SB1254

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO Collector-emitter voltage

IC=-30mA ; IB=0

-140

V

VCEsat Collector-emitter saturation voltage IC=-6A ;IB=-6mA

-2.5

V

VBEsat Base-emitter saturation voltage

ICBO

Collector cut-off current

ICEO

Collector cut-off current

IEBO

Emitter cut-off current

IC=-6A ;IB=-6mA

VCB=-160V; IE=0

VCE=-140V; IB=0

VEB=-5V; IC=0

-3.0

V

-100 μA

-100 μA

-100 μA

hFE-1

DC current gain

IC=-1A ; VCE=-5V

2000

hFE -2

DC current gain

IC=-6A ; VCE=-5V

5000

30000

fT

Transition frequency

IC=-0.5A ; VCE=-10V;f=1MHz

20

MHz

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-6A; VCC=50V

IB1=-IB2=-6mA

1.0

μs

1.5

μs

1.2

μs

2

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