2SB1260L-R-TN3-K Просмотр технического описания (PDF) - Unisonic Technologies

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2SB1260L-R-TN3-K

PNP SILICON TRANSISTOR

Unisonic Technologies 

2SB1260

TYPICAL CHARACTERICS(Cont.)

Emitter Input Capacitance vs. Emitter-

1000

Base Voltage

Ta=25℃

500

f=1MHz

Ic=0A

200

100

50

20

-0.1 -0.2 -0.5 -1 -2 -5 -10

Emitter To Base Voltage, VEB(V)

PNP SILICON TRANSISTOR

Safe Operating Area

-2

-1

-0.5

-0.2

PW=100ms

-0.1

-0.05 Ta=25℃

*Single pulse

-0.5 -1 -2 -5 -10 -20 -50 -100

Collector to Emitter Voltage, VCE(V)

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R208-017,C

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