2SB1252 Просмотр технического описания (PDF) - Panasonic Corporation
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производитель
2SB1252 Datasheet PDF : 3 Pages
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Power Transistors
PC — Ta
60
(1) TC=Ta
(2) With a 100 × 100 × 2mm
50
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(1) (4) Without heat sink
40
(PC=2W)
30
20
(2)
(4)
10
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
–6
TC=25˚C
–5
IB=– 0.5mA
–4
– 0.4mA
– 0.3mA
–3
– 0.2mA
–2
– 0.1mA
–1
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB1252
–100
–30
–10
VCE(sat) — IC
IC/IB=1000
–3
–1
– 0.3
TC=100˚C
–25˚C
25˚C
– 0.1
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (A)
–100
–30
–10
VBE(sat) — IC
IC/IB=1000
–3
TC=–25˚C
–1
100˚C
25˚C
– 0.3
– 0.1
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (A)
100000
30000
10000
3000
1000
hFE — IC
TC=100˚C
VCE=5V
25˚C
–25˚C
300
100
30
10
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Collector current IC (A)
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
100
30
10
3 ton
tf
1 tstg
ton, tstg, tf — IC
Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000
(–IB1=IB2)
VCC=–50V
TC=25˚C
0.3
0.1
0.03
0.01
0
–2
–4
–6
–8
Collector current IC (A)
Area of safe operation (ASO)
–100
–30
Non repetitive pulse
TC=25˚C
–10 ICP
–3 IC
10ms
t=1ms
–1
DC
– 0.3
– 0.1
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
2
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