2SB1132(2005) Просмотр технического описания (PDF) - Unisonic Technologies
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2SB1132 Datasheet PDF : 4 Pages
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2SB1132
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-32
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
DC
Collector Current (Single pulse, Pw=100ms)
PULSE
IC
-1
A
-2
A
Collector Power Dissipation
SOT-89
TO-252
PC
0.5
W
1
W
Junction Temperature
Storage Temperature
TJ
150
°C
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Note: Measured using pulse current.
SYMBOL
TEST CONDITIONS
BVCBO IC = -50µA
BVCEO IC = -1mA
BVEBO IE= -50µA
ICBO VCB= -20V
IEBO VEB= -4V
VCE(SAT) IC = -500mA,IB= -50mA (Note)
hFE VCE= -3V,IC = -0.1A (Note)
fT VCE= -5V, IE= 50 mA, f=30MHz
Cob VCB= -10V, IE= 0A,f=1MHz
MIN TYP MAX UNIT
-40
V
-32
V
-5
V
-0.5 µA
-0.5 µA
-0.2 -0.5 V
82
390
150
MHz
20 30 pF
CLASSIFICATION OF hFE
RANK
RANGE
P
82-180
Q
120-270
R
180-390
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R208-016,B
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