B1017 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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производитель

B1017

PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A

VBE

Base-emitter on voltage

IC=-3A ;VCE=-5V

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE-1

DC current gain

VCB=-80V; IE=0

VEB=-5V; IC=0

IC=-0.5A ; VCE=-5V

hFE-2

DC current gain

IC=-3A ; VCE=-5V

fT

Transition frequency

IC=-0.5A; VCE=-5V

COB

Collector output capacitance

IE=0, f=1MHz ; VCB=-10V

‹ hFE-1 Classifications

R

O

Y

40-80 70-140 120-240

Product Specification

2SB1017

MIN TYP. MAX UNIT

-80

V

-1.0 -1.7

V

-1.0 -1.5

V

-30 μA

-100 μA

40

240

15

9

MHz

130

pF

2

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