2SA636 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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Компоненты Описание

производитель

2SA636

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A

VBEsat Base-emitter saturation voltage

IC=-1.5A ;IB=-0.15A

ICBO

Collector cut-off current

VCB=-45V; IE=0

IEBO

Emitter cut-off current

hFE-1

DC current gain

hFE-2

DC current gain

VEB=-3V; IC=0

IC=-20mA ; VCE=-5V

IC=-0.5A ; VCE=-5V

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-0.1A ; VCB=-5V

‹ hFE-2 classifications

N

M

L

K

40-60 50-100 80-160 120-250

Product Specification

2SA636 2SA636A

MIN TYP. MAX UNIT

-0.5 -2.0

V

-0.8 -2.0

V

-1

μA

-1

μA

20

40

250

60

pF

45

MHz

2

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