2SA633 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SA633

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-0.1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A

VBEsat

Base-emitter saturation voltage

IC=-2A ;IB=-0.2 A

ICBO

Collector cut-off current

VCB=-20V; IE=0

ICEO

Collector cut-off current

VCE=-12V; IB=0

IEBO

Emitter cut-off current

VEB=-3V; IC=0

hFE-1

DC current gain

IC=-20mA ; VCE=-5V

hFE-2

DC current gain

IC=-1A ; VCE=-5V

fT

Transition frequency

IC=-0.1A ; VCE=-5V

Product Specification

2SA633

MIN TYP. MAX UNIT

-30

V

-5

V

-1.0

V

-1.5

V

-1

µA

-100

µA

-1

µA

20

80

250

60

MHz

2

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