A1837 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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производитель

A1837

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0

VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA

VBE

Base-emitter voltage

IC=-0.5A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-230V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-0.1A ; VCE=-5V

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-0.1A ; VCE=-10V

Product Specification

2SA1837

MIN TYP. MAX UNIT

-230

V

-1.5

V

-1.0

V

-1.0 μA

-1.0 μA

100

320

30

pF

70

MHz

2

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