2SA1939 Просмотр технического описания (PDF) - Inchange Semiconductor
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производитель
2SA1939 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1939
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
-80
V
VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-0.5A
-2.0
V
VBE
Base-emitter voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=-3A ; VCE=-5V
VCB=-80V; IE=0
VEB=-5V; IC=0
-1.5
V
-5
μA
-5
μA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
55
160
hFE-2
DC current gain
IC=-3A ; VCE=-5V
35
fT
Transition frequency
固I电NC半H导A体NGE SEMICONDUCTOR COB
Output capacitance
hFE-1 classifications
R
O
55-110
80-160
IC=-1A ; VCE=-5V
IE=0; VCB=-10V;f=1MHz
30
MHz
180
pF
2
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