2SA1939 Просмотр технического описания (PDF) - Toshiba

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Компоненты Описание

производитель

2SA1939

Silicon PNP Triple Diffused Type Transistor

Toshiba 

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

ICBO

VCB = −80 V, IE = 0

IEBO

VEB = −5 V, IC = 0

V (BR) CEO IC = −50 mA, IB = 0

hFE (1)

VCE = −5 V, IC = −1 A

(Note)

hFE (2)

VCE (sat)

VBE

fT

Cob

VCE = −5 V, IC = −3 A

IC = −5 A, IB = −0.5 A

VCE = −5 V, IC = −3 A

VCE = −5 V, IC = −1 A

VCB = −10 V, IE = 0, f = 1 MHz

Note: hFE (1) classification R: 55 to 110, O: 80 to 160

Marking

2SA1939

Min Typ. Max Unit

―

― −5.0 μA

―

― −5.0 μA

−80 ―

―

V

55

―

160

35

80

―

― −1.0 −2.0

V

― −0.95 −1.5

V

―

30

― MHz

― 180 ―

pF

TOSHIBA

A1939

Characteristics

indicator

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-09

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