2SA1762 Просмотр технического описания (PDF) - Panasonic Corporation
Номер в каталоге
Компоненты Описание
производитель
2SA1762 Datasheet PDF : 4 Pages
| |||
Transistors
2SA1762
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SC4606
■ Features
• High collector-emitter voltage (Base open) VCEO
• Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−80
V
Collector-emitter voltage (Base open) VCEO
−80
V
Emitter-base voltage (Collector open) VEBO
−5
V
Collector current
IC
− 0.5
A
Peak collector current
ICP
−1
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
(0.85)
0.55±0.1
0.45±0.05
3
2
1
(2.5) (2.5)
1 : Base
2 : Collector
3 : Emitter
M-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *1
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
VEBO
ICBO
hFE1 *2
hFE2
VCE(sat)
VBE(sat)
fT
Cob
IC = −10 µA, IE = 0
−80
IC = −100 µA, IB = 0
−80
IE = −10 µA, IC = 0
−5
VCB = −20 V, IE = 0
VCE = −10 V, IC = −150 mA
130
VCE = −5 V, IC = −500 mA
50
IC = −300 mA, IB = −30 mA
IC = −300 mA, IB = −30 mA
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
Typ Max
− 0.1
330
100
− 0.4
−1.2
120
11 20
Unit
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
R
S
hFE1
130 to 220 185 to 330
Publication date: November 2002
SJC00029BED
1
Share Link: 