2SA1739 Просмотр технического описания (PDF) - Panasonic Corporation
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2SA1739 Datasheet PDF : 3 Pages
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Transistors
2SA1739
Silicon PNP epitaxial planar type
For high speed switching
Complementary to 2SC3938
■ Features
• High speed switching
• Low collector-emitter saturation voltage VCE(sat)
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−15
V
Collector-emitter voltage (Base open) VCEO
−15
V
Emitter-base voltage (Collector open) VEBO
−4
V
Collector current
IC
−50
mA
Peak collector current
ICP
−100
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: AX
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = −8 V, IE = 0
Emitter-base cutoff current (Collector open) IEBO VCE = −3 V, IC = 0
Forward current transfer ratio
hFE1 * VCE = −1 V, IC = −10 mA
50
hFE2 VCE = −1 V, IC = −1 mA
30
Collector-emitter saturation voltage
VCE(sat) IC = −10 mA, IB = −1 mA
Transition frequency
fT
VCB = −10 V, IE = 10 mA, f = 200 MHz 800
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −5 V, IE = 0, f = 1 MHz
− 0.1
− 0.1
150
− 0.1
1 500
1
− 0.2
µA
µA
V
MHz
pF
Turn-on time
ton Refer to the switching time
12
ns
Turn-off time
Storage time
toff measurement circuit
tstg
20
ns
19
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
No-rank
hFE1
Marking symbol
50 to 120
AXQ
90 to 150
AXR
50 to 150
AX
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2003
SJC00027BED
1
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